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VueReal appoints VP of semiconductor engineering - News
Jan 9, 2025 · Canadian microLED firm VueReal has appointed Giuseppe Buscemi as VP of semiconductor engineering, a role in which he will help to scale VueReal’s production capabilities to meet growing demand .
Clas-SiC expands technology in its stride - News
Founded in 2017, Clas-SiC Wafer Fab is the world’s first open foundry dedicated to SiC. At our facility, located in Lochgelly on the outskirts of Scotland’s capital city, Edinburgh, we have adopted a pure-play approach, which means that we’ll never be in competition with our device customers.
Printing high-speed modulators on SOI - News
Jan 13, 2025 · Micro-transfer printing promises high throughput process for uniting InP-based electro-absorption modulators with silicon-based PICs
Imec makes breakthrough with GaAs lasers on silicon
Jan 9, 2025 · Belgian research organisation Imec has announced a significant milestone in silicon photonics with the successful demonstration of electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on …
Na‑flux method improves GaN device performance - News
Jan 8, 2025 · Toyoda Gosei has shown how a technology to enhance GaN substrates can improve device performance compared to commercially-available substrates in both power regulation capacity and yield ratio.
Riber gets repeat US order for MBE 412 cluster - News
Jan 9, 2025 · French MBE company Riber has received a repeat order from long-standing customerTeledyne Imaging Sensors (TIS) for an MBE 412 cluster research system.
Infineon launches new generation of GaN discretes - News
Nov 4, 2024 · Infineon has launched a new family of high-voltage discretes, the CoolGaN transistors 650 V G5. Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data centre and telecom rectifiers to renewable energy and motor drives in home appliances.
Rohm develops 1kW class IR laser diode - News
Jan 7, 2025 · The new product retains the key features of Rohm’s conventional laser diodes, including uniform emission intensity across the emission width along with a low wavelength temperature dependence of 0.1nm/°C (vs 0.26 to 0.28nm/°C for standard products).
Penn State makes breakthrough in photonic switching
Jan 7, 2025 · Until now, the photonic switches used for routing optical signals have been hindered by a fundamental tradeoff between size and speed: Larger switches can handle higher speeds and more data but also consume more energy, occupy more physical space and drive up costs.